inchange semiconductor isc product specification isc silicon npn power transistor 2SC4580 description collector-emitter sustaining voltage- : v ceo(sus) = 450v(min) fast switching speed applications designed for power switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 600 v v ceo collector-emitter voltage 450 v v cex collector-emitter voltage v eb = 5v 600 v v ebo emitter-base voltage 7 v i c collector current-continuous 8 a i cm collector current-peak 16 a i b b base current-continuous 4 a i bm base current-peak 8 a p t total power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4580 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0 450 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 0.8a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 0.8a b 1.5 v i cbo collector cutoff current at rated voltage 100 a i ceo collector cutoff current at rated voltage 100 a i ebo emitter cutoff current at rated voltage 100 a h fe-1 dc current gain i c = 4a; v ce = 5v 10 h fe-2 dc current gain i c = 1ma; v ce = 5v 5 f t current-gain?bandwidth product i c = 0.8a; v ce = 10v 20 mhz switching times t on turn-on time 0.5 s t stg storage time 2.0 s t f fall time i c = 4a, i b1 = 0.8a; i b2 = -1.6a r l = 37.5 ; v bb2 = 4v 0.2 s isc website www.iscsemi.cn 2
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